Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries

ABSTRACT

An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.

RELATED APPLICATION

This application, pursuant to 37 C.F.R. 1.78(c), claims the benefit ofU.S. Provisional Application Ser. No. 60/482,973 filed on Jun. 26, 2003.

The United States Government has rights in this invention pursuant toContract No. W-31-109-ENG-38 between the U.S. Department of Energy (DOE)and The University of Chicago representing Argonne National Laboratory.

BACKGROUND OF THE INVENTION

The overarching goal of diamond thin film research is to developtechniques and practices that allow the deposition of films on a varietyof substrates that retain most if not all of the outstanding propertiesof natural diamond (hardness, electron mobility, thermal conductivity,etc.). This work has been going on for many years and has resulted in anumber of thin film deposition technologies for growing diamond (>95%crystalline sp³ bonded carbon) films. The two major techniques areplasma enhanced chemical vapor deposition (PECVD, using either RF ormicrowave frequencies) and hot-filament CVD reactors, although otherforms of CVD also exist as well for diamond deposition (i.e. arc-jet andoxyacetylene flame growth.

The previous technology is based on the use of plasma chemistries thatgrow diamond films with micrometer size gains and low-energy grainboundaries, using a typical gas mixture of 1% CH₄. These films arecommonly referred to as microcrystalline diamond (MCD), and have adistinct columnar structure where the grain size (and roughness)increase with increasing film thickness. Diamond growth in these filmsproceeds via chemical reactions at the growing surface wherein a methylradical adsorbs unto a site following the abstraction of hydrogen fromthis site. The presence of atomic hydrogen in the plasma is criticallyneeded in order to abstract hydrogen from the surface as well as to etchthe non-diamond carbon during growth. These films consist of >99%diamond bonded carbon but are imperfect renderings of diamond as a thinfilm, suffering from many drawbacks that ultimately limit theircommercialization. Many companies setup to commercialize MCD in theearly 90's failed as a consequence of these limitations.

Nanocrystalline diamond films (NCD) can be grown by increasing thecontent of CH₄ in the CH₄/H₂ plasma to about 4-5%. NCD films, whichconsist of nanometer-sized grains of diamond (sp³) bonded carbon, haveshown some promise as commercially viable carbon coatings, but a keychallenge in these films is the control of their nanoscale morphologyand uniformity of the bonding structure, so as to retain the propertiesof natural diamond. These films are often, but not always two-phasematerials, with nanometer sized (>50 nm) grains of diamond-bonded carbonimbedded in an amorphous, sp²-bonded carbon matrix. They areconsequently not as hard as natural diamond. Additionally, even in thebest of cases (phase-pure nanocrystalline diamond films) these filmsrequire a very high initial nucleation density in order to formnanometer grains, and the grain size of these films increases with filmthickness, limiting the thickness of the NCD films.

Over the past several years work at Argonne National Laboratory (ANL)has lead to the invention of an alternative diamond film technology:Ultrananocrystalline Diamond (UNCD) as described in U.S. Pat. No.5,989,511, the disclosure of which is incorporated by reference, whichis based on a fundamentally different chemistry. UNCD films aretypically grown using gas mixtures consisting of 99% Ar with 1% CH₄ (a99/1 plasma) that claims C₂ dimers as the species that play a key rolein the nucleation of the UNCD films and might contribute to the growthprocess as well. The C₂ dimers are produced by plasma assisted breakdownand reaction of the parent molecules. The so called UNCD films werethought to consist entirely of diamond grains 3-5 nm in size (withcrystalline sp³ coordinated carbon atoms) with high-energy, high angletwist grain boundaries (with disordered sp² coordinated carbon atoms).It is the nanoscale structure of these films that give them a uniquecombination of material properties, including exceptional hardness, 20nm rms as deposited roughness, low film stress, low as-depositedfriction coefficient, high electronic conductivity when doped withnitrogen or boron, and many other properties.

Recent work, however, has shown that for the 99/1 plasma chemistry mosttypically used about 10% of the carbon in a UNCD film does not have theUNCD nanoscale bonding structure, but instead consists of largeinclusions (˜100 nm) of heavily twinned-dendritic inclusions ofcrystalline sp³-bonded carbon. In short, carbons films grown using 99/1plasmas are not pure UNCD, but consist of a mixture of UNCD and MCD,with the MCD portion greater than 8% by volume and generally more than10% by volume of the diamond. The addition of hydrogen to the gasmixture leads to the very rapid increase in the volume fraction of MCDin the films relative to the UNCD component, increasing to 50% MCD for5% added hydrogen by volume (94% Ar/1% CH₄/5% H₂) and >90% MCD for 20%added hydrogen. Recent TEM results shown in FIG. 1 dramaticallyillustrate this UNCD+MCD structure directly. FIG. 1 illustratesdifferences in a 1% methane plasma with varying added hydrogen. Most ofthe films grown prior to about 1998 were grown using significant amountsof added hydrogen.

In addition, further recent work has also shown that, when the amount ofhydrogen gas is reduced below a certain level, which is dependent tosome extent on substrate temperature, as will be explained, theresulting film consists of a large amount of sp²-bonded carbon, and isthus useless for applications that require either nanocrystalline orultrananocrystalline films nanocrystalline applications.

SUMMARY OF THE INVENTION

The present invention solves the problem of growing thin films of acarbon material of ultrananocrystalline diamond (UNCD), on surfaces ofinsulator, semiconductor, and/or conductor materials. The presentinvention is based on the discovery that only for a certain, narrowrange of plasma compositions, in which the amount of hydrogen gas isprecisely controlled, a film of “pure UNCD” is grown, where “pure UNCD”means that the UNCD film microstructure is characterized by grains of3-5 nm in size with sp³ bonded carbon atoms, and atomic wide (˜0.4 nm)grain boundaries with carbon atoms bonded in sp², sp³, and other localgeometries and wherein the volume percent of microcrystalline diamond(MCD) in the film is less than about 8. This invention therefore servesto identify and describe the synthesis of a “pure UNCD” film.

Accordingly, it is an object of the present invention to provide anultrananocrystalline diamond film having an average grain size between 3and 5 nm with up to about 8% by volume diamond having an average grainsize greater than 10 nm.

Another object of the present invention is to provide a method ofmanufacturing an UNCD film comprising forming a vapor of acetylene andhydrogen that is thermally stable at 1000° K in an inert gas other thanHe wherein the volume ratio of acetylene to hydrogen is greater than0:35 and less than about 0.85 with the balance being an inert gas,subjecting the vapor to a suitable amount of energy to fragment at leastsome of the acetylene, and contacting the fragment containing vapor anda substrate, and forming an UNCD film having an average grain size of 3to 5 nm with not more than about 8% by volume diamond having an averagegrain size larger than 10 nm on the substrate.

Yet another object of the present invention is to provide a method ofmanufacturing UNCD film comprising forming a vapor of C₂H₂ and H₂ in aninert gas of Ar and/or Kr and/or Xe wherein the C₂H₂ to H₂ to volumeratio is greater than 0.35 and less than 0.85, with the balance beingthe inert gas, fragmenting a portion of the C₂H₂ by providing microwaveenergy to the vapor, and contacting the vapor containing acetylenefragments and a substrate maintained at a temperature less than about600° C. to form an UNCD film having an average grain size of 3 to 5 nmwith not more than about 8% by volume diamond having an average grainsize larger than 10 nm on the substrate.

Still another object of the invention is to provide a method ofmanufacturing UNCD film, comprising forming a vapor of a carboncontaining compound that does not form methyl radicals uponfragmentation and hydrogen that is thermally stable at 1000° K in aninert gas other than He wherein the concentration of hydrogen is lessthan 1.5% by volume, with the balance being an inert gas, objecting thevapor to a suitable amount of energy to fragment at least some of thecarbon containing vapor, and contacting the fragment containing vaporand a substrate, and forming an UNCD film having an average grain sizeof 3 to 5 nm with not more than 8% by volume diamond having an averagegrain size larger than 10 nm on the substrate.

A final object of the present invention is to provide a UNCD film madeaccording to the various methods set forth above.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention consists of certain novel features and a combination ofparts hereinafter fully described, illustrated in the accompanyingdrawings, and particularly pointed out in the appended claims, it beingunderstood that various changes in the details may be made withoutdeparting from the spirit, or sacrificing any of the advantages of thepresent invention.

FIGS. 1(a-e) are transmission electron micrographs (TEMs) of prior artUNCD thin films grown in a methane plasma with successive amounts ofadded hydrogen in the plasma;

FIG. 2 is a TEM micrograph of a carbon film grown using anargon/acetylene/hydrogen plasma with 0.5% added hydrogen by volume at800° C.;

FIG. 3 is a graph of near Edge X-ray Absorption Fine Structure (NEXAFS)taken on a beam line 8.0.1 at the Advanced Light Source (LBNL) showingthe change in local bonding structure of the diamond film grown usingtwo different gas mixtures;

FIG. 4 (a-b) are a Electron Energy Loss Spectroscopy (EELS) obtainedfrom the samples shown in FIG. 2 with 4(a) showing the grain region and4(b) from the grain boundary;

FIG. 5 is a graphical representation of the relationship for acetylenegrown UNCD thin films wherein the added hydrogen to the plasma is variedand the average inclusion size and the estimated percentages ofinclusions in the films thereof;

FIG. 6 is a NEXAFS representation of three acetylene films withdifferent hydrogen concentrations grown at 800° C.;

FIGS. 7-9 are SEMs of the surface morphology of the films of FIG. 6;

FIG. 10 is a low resolution TEM of the acetylene films illustrated inFIGS. 6-9 at 0.2 micron scale;

FIG. 11 is a low resolution TEM like FIG. 10 but at a 50 nm scale; and

FIG. 12 is a graph like FIG. 5 using the volume ratio of acetylene tohydrocarbon rather than the % hydrogen.

DESCRIPTION OF PREFERRED EMBODIMENT

The Innovative Plasma Systems GmbH (IPLAS) microwave plasma system hasallowed the inventors to examine carbon films grown usingacetylene-based (instead of methane-based) plasmas, i.e. usingAr/C₂H₂/H₂ gas mixtures. In methane plasmas, the methane thermallydecomposes to C₂H₂ and H₂, so that a 99/1 plasma in facts contains 1.5%H₂ (see FIG. 1 a) that comes from a combination of the added hydrogenand from the methane. Thus, the amount of H₂ in the plasma can bereduced below 1.5% using acetylene-based plasmas.

Recent TEM data obtained from a film grown using a 99% Ar/1% C₂H₂/0.5%H₂ plasma at 800° C. is shown in FIG. 2, which shows a very differentmorphology compared with normal UNCD films (FIG. 1 a) and illustratesthat even with C₂H₂ the hydrogen concentrations are very important asthe material of FIG. 2 is unsatisfactory.

FIG. 3 shows x-ray absorption data obtained from two samples grown usingthe same parameters in every way except the percentage Near Edge X-rayAbsorption Fine Structure (NEXAFS) of hydrogen gas in the plasma.

FIG. 4 shows nanoprobe EELS (electron energy loss spectroscopy) datataken from different regions of the film shown in FIG. 2. The grainboundaries (b) consist of mostly disordered sp²-bonded carbon, whereasthe grains (a) consist of a mixture of sp² and crystalline sp³-bondedcarbon (i.e. diamond).

The film grown using 98% Ar/1% C₂H₂/1% H₂ (FIG. 3, bottom graph) shows aspectrum characteristic of normal UNCD, whereas a reduction in therelative percentage of hydrogen to 0.5% leads to a film with a roughly50/50 mixture of sp² and sp³ bonded carbon, as previously illustrated inFIGS. 2 and FIGS. 4(a) and (b). Accordingly, it has been found that evenwhen using acetylene as a carbon source only strict control of acetyleneand hydrogen concentration produce “pure UNCD” films.

The basis for the present invention is the discovery that only for acertain, narrow range of plasma compositions, in which the amount ofhydrogen gas used is finite and is finely controlled, will the growth ofa carbon film that is “pure UNCD” occur. This invention includes both“pure UNCD” film and method of making same.

The presence of C₂-dimers is a necessary but not a sufficient conditionfor the growth of a “pure” UNCD film, as seen by the prior art methanebased UNCD films. To grow a film consisting of “pure” sp³-bonded diamondgrains 3-5 nm in size, and whose grain boundaries are high-energy,high-angle twist grain boundaries, one must:

-   -   1. Maximize the amount of material grown through the C₂-dimer        reaction pathway.    -   2. Minimize the amount of material grown through the methyl        radical (CH₃—, H⁺) reaction pathway.    -   3. Minimize the amount of sp²-bonded carbon that is not bonded        within the grain boundaries.

Use of a noble-gas-based plasma chemistry that leads to the productionof C₂-dimers, and produces a maximal amount of C₂ relative to CH₃ ⁻ andother hydrocarbon radicals without significant production of methylradicals.

Fine control of the amount of hydrogen in the plasma. The presence of aminimal amount of hydrogen gas in the gas mixture should be preciselycontrolled, depending on temperature and the content of other gases, inorder to

-   -   stabilize the growing diamond nanocrystals, by terminating the        growing diamond surfaces with hydrogen.    -   promote the formation of C₂ dimers in the plasma.    -   promote the growth of diamond nanocrystals in the 3-10 nm size        range.    -   etch the non-diamond carbon that is not bonded within the grain        boundaries, and    -   stabilize the noble gas discharge.

Growth between 300-800° C. temperatures must be high-enough to promotethe C₂-dimer reaction pathway but not too high as to desorb the hydrogenterminating the growing diamond surfaces. Since the hydrogen desorptionfrom the growing film is a strong function of temperature, the amount ofadded hydrogen needed to maintain the hydrogen termination of thesurface is dependent on temperature, with less hydrogen needed as thetemperature is lowered.

The gas mixture should be precisely controlled so that the sootproduction in the plasma and reactor is held to a minimum. This involvesthe fine adjustment of the flow of carbon-source gas relative to theother gases.

The gas mixture, gas flow rates, microwave power, if a microwave powersource is used, total pressure, substrate temperature, and other processparameters must also be dynamically controlled in order to maintain theoptimal growth of “pure” UNCD.

When acetylene is used in combination with other gases in the plasma,the volume ratio of acetylene to hydrogen should be greater than 0.35and less than about 0.7 to produce a UNCD film which contains less thanabout 8% by volume of the larger MCD crystallites. Using acetyleneensures that the least amount of CH₃— radical is produced during themanufacture of the inventive “pure UNCD” materials. There is arelationship between the temperature at which the film is grown and theamount of non-diamond carbon produced. Preferably, the substratetemperature at which the acetylene based material is grown is at 600° C.or less. Below 500° C. growth rate diminishes severely, however, growthrates as low as 300° C. are still acceptable, but not necessarilypreferred, whereas temperatures as high as 800° C. may be used but arenot preferred.

The precise amount of hydrogen needed in the plasma and hence the volumeratio of acetylene to hydrogen is dependant upon the temperature atwhich the diamond film is grown. For typical UNCD deposition conditions(temp.=800° C.), the amount of added hydrogen in the plasma must bekept >0.5% in order to produce a “pure UNCD” film with no graphiticphase present. As the growth temperature is reduced, the amount ofhydrogen needed to produce a “pure UNCD” film decreases to 0.5%, untilat 600° C., a “pure UNCD” film is formed under these conditions. Thetentative explanation for this is that as the temperature is reduced,the amount of hydrogen thermally desorbed from the growing diamondsurface is reduced, allowing for the maintenance of stable diamondnuclei even under the extremely hydrogen-poor conditions found here.

FIG. 5 disclose the relationship for acetylene grown UNCD thin filmsbetween the percent added hydrogen to the gas phase and the averageinclusion size on the left hand Y axis and the estimated percent ofinclusions on the right hand Y axis, with the square data pointsreferring to the average inclusion side and the circular data pointsreferring to the estimated percent of inclusions. As seen from FIG. 5, 8volume percent inclusions resulted from approximately 1.37% addedhydrogen in the plasma phase and at about 1.2% added hydrogen there wasless than 6 volume percent inclusions.

The data point at 0.5% added H₂ represents about 50% sp² material (seeFIG. 2) which is completely unsatisfactory for UNCD purposes. However,it is believed that approximately 0.75% added hydrogen produces anacceptable “pure UNCD” although it is clear from the data that as thehydrogen content diminishes below about 0.75% hydrogen, the greater thechance that significant amounts of sp² material is formed. At 1% addedhydrogen, a very good material as illustrated in FIGS. 6-11 is formed.FIG. 6 is a NEXAFS graph of 3 acetylene films grown at microwave powerof about 850 watts at temperatures of about 800° C. and pressure of 20millibar. The films were grown over a period of about 3 hours and hadthicknesses of 0.45 microns for sample 96, 0.79 microns for sample 97and 1.1 micron for sample 98. In all cases, temperature refers to thesubstrate temperature not, of course, the plasma temperature. FIG. 6shows that there is a significant amount of graphite or −sp² material atthe 285 eV energy level and therefore sample 96 at 0.5% added hydrogenis unsatisfactory material, as previously discussed. Although the NEXAFSdata does not distinguish between material in samples 97 and 98, thesample 97 material which is the last data point of 1.5% added hydrogenin FIG. 5 shows that the volume percent of inclusions is approximately10%, an amount which excludes this material as “pure UNCD” film.

Referring now to FIGS. 7-9, inclusive, there are shown differences inthe surface morphology of acetylene UNCD films with hydrogenconcentrations of 0.5%, 1.5% and 1%, respectively. As clearly may beseen sample #98, FIG. 9 has the least dark material which is the MCD,while having the most amount of lighter material, “pure UNCD”.

Referring now to FIGS. 10 and 11, there are low resolution TEMs of filmsfor samples 96, 97 and 98, the three data points in FIG. 5. As seen fromFIGS. 10 and 11. FIG. 12 is the data of; FIG. 5 expressed as the volumeratio of acetylene to hydrogen for the x-axis rather than the volumepercent of hydrogen as in FIG. 5. As can be seen, good films are madefor acetylene to hydrogen ratios of greater than 0.35 and less thanabout 0.85 but the range of 0.35 to 0.7 is preferred. For ratios ofabout 0.4 films having less than 6% of inclusions greater than 10 nm areproduced.

When looking at the TEM images, what we see are areas of brighterregions and darker regions. On closer examination (highermagnification), we can see a difference in the local nanostructure ofthese regions. While both regions are undoubtedly made up of diamond(i.e. each have the same lattice spacing as (111) diamond), the regionsof the darker areas exhibit a nanostructure similar to heavily faultedmicrocrystalline diamond, in that there are no small grains, just alarge grain with a number of different types of defects, such asstacking faults and twinning planes (common in fee materials). Thelighter regions, however, show a much different nanostructure—theseareas exhibit the nano-sized grains commonly referred to when discussingUNCD thin films.

The difference in the contrast of these areas of differing structure inthe low resolution images is due to the fact that the microcrystallinediamond inclusions more strongly diffract the electron beam than thenanocrystalline diamond regions in this film. This difference incontrast was increased in the electron microscope by inserting anobjective aperture into the path of the electron beam, which effectivelyblocked off more strongly diffracted beams from contributing to theimage.

Although the above description of “pure UNCD” films has concentrated onacetylene films grown with microwave induced plasmas, it should beunderstood that other hydrocarbon compounds that do not readily formmethyl radicals such as fullerenes and/or anthracene may be used in thepresent invention to provide “pure UNCD” film. Moreover, a variety ofdifferent power sources and plasmas may be used and the invention is notlimited to microwave plasma but includes PECVD using RF as well ashot-filament CVD reactors.

While there has been disclosed what is considered to be the preferredembodiments of the present invention, it is understood that variouschanges in the details may be made without departing from the spirit, orsacrificing any of the advantages of the present invention

1. An ultrananocrystalline diamond (UNCD) having an average grain sizebetween 3 and 5 nanometers (nm) with not more than about 8% by volumediamond having an average grain size larger than 10 nm.
 2. The UNCD ofclaim 1, wherein diamond having an average grain size larger than 10 nmis present in an amount less than 6% by volume.
 3. The UNCD of claim 1,wherein diamond having an average grain size larger than 10 nm ispresent in an amount in the range of from about 3% by volume to not morethan about 8% by volume.
 4. The UNCD of claim 1, wherein said UNCD hasgrain boundaries of about 0.4 nm.
 5. The UNCD of claim 1, wherein saidUNCD is essentially sp³-bonded diamond.
 6. The UNCD of claim 1, whereinsubstantially all sp²-bonded carbon present is at the UNCD grainboundaries.
 7. The UNCD of claim 1, wherein the UNCD grain boundariesare high energy.
 8. The UNCD of claim 1, wherein the UNCD grainboundaries are high-angle twist.
 9. An UNCD having average grain sizebetween 3 and 5 nm with diamond having average grain size larger than 10nm present in the range of from about 3% by volume to not more than 8%by volume and wherein the UNCD is essentially sp³ bonded diamond andwherein substantially all sp² bonded carbon present is at the UNCD grainboundaries.
 10. A method of manufacturing UNCD film, comprising forminga vapor of acetylene and hydrogen that is thermally stable at 1000° K inan inert gas other than He wherein the volume ratio of acetylene tohydrogen is greater than 0.35 and less than 0.85, with the balance beingan inert gas, subjecting the vapor to a suitable amount of energy tofragment at least some of the acetylene, and contacting the fragmentcontaining vapor and a substrate, and forming an UNCD film having anaverage grain size of 3 to 5 nm with not more than about 8% by volumediamond having an average grain size larger than 10 nm on the substrate.11. The method of claim 10, wherein the fragment containing vapor hassubstantially no methyl radicals and the ratio of C₂H₂ to H₂ is greaterthan 0.35 and less than about 0.7.
 12. The method of claim 10, whereinthe substrate temperature is maintained at about 600° C. or lower duringfilm formation.
 13. The method of claim 10, wherein the energy ismicrowave energy.
 14. The method of claim 10, wherein the inert gas isargon.
 15. The method of claim 10, wherein the UNCD film has diamondwith average grain sizes larger than 10 nm present in a volume percentin the range of from about 3% to not more than about 8%.
 16. The methodof claim 10, wherein the UNCD is deposited at a rate of not less than0.2 micrometers per hour while the substrate is maintained at atemperature of less than about 600° C.
 17. The method of claim 10,wherein the UNCD is deposited at a rate of not less than 0.4 micrometersper hour while the substrate is maintained at a temperature of less thanabout 400° C.
 18. A method of manufacturing UNCD film, comprisingforming a vapor of C₂H₂ and H₂ in an inert gas of Ar and/or Kr whereinthe C₂H₂ to H₂ volume ratio is greater than 0.35 and less than 0.85,with the balance being the inert gas, fragmenting at least some of theC₂H₂ by providing microwave energy to the vapor, and contacting thevapor containing acetylene fragments and a substrate maintained at atemperature less than about 600° C. to form an UNCD film having anaverage grain size of 3 to 5 nm with not more than about 8% by volumediamond having an average grain size larger than 10 nm on the substrate.19. The method of claim 18, wherein the inert gas is argon.
 20. Themethod of claim 19, wherein the UNCD film has diamond with average grainsizes larger than 10 nm present in a volume percent in the range of fromabout 3% to not more than about 8% and the C₂H₂ to H₂ ratio is greaterthan 0.35 and less than about 0.7.
 21. The method of claim 20, whereinthe UNCD is deposited at a rate of not less than 0.2 micrometers perhour while the substrate is maintained at a temperature of less thanabout 600° C.
 22. The method of claim 18, wherein the UNCD is depositedat a rate of not less than 0.4 micrometers per hour while the substrateis maintained at a temperature of less than about 400° C.
 23. A UNCDfilm made according to the method of claim
 18. 24. A UNCD film madeaccording to the method of claim
 21. 25. A method of manufacturing UNCDfilm, comprising forming a vapor of a carbon containing compound thatdoes not readily form methyl radicals upon fragmentation and hydrogenthat is thermally stable at 1000° K in an inert gas other than Hewherein the concentration of hydrogen is less than 1.5% by volume, withthe balance being an inert gas, subjecting the vapor to a suitableamount of energy to fragment at least some of the carbon containingvapor, and contacting the fragment containing vapor and a substrate, andforming an UNCD film having an average grain size of 3 to 5 nm with notmore than 8% by volume diamond having an average grain size larger than10 nm on the substrate.
 26. The method of claim 25, wherein the carboncontaining compound is one or more of a fullerene, acetylene andanthracene.
 27. An article of manufacture made by the method of claim26.